? semiconductor components industries, llc, 2008 may, 2008 ? rev. 4 1 publication order number: mbr30h100ct/d mbr30h100ct, mbrf30h100ct switchmode ? power rectifier 100 v, 30 a features and benefits ? low forward voltage: 0.67 v @ 125 c ? low power loss/high efficiency ? high surge capacity ? 175 c operating junction temperature ? 30 a total (15 a per diode leg) ? pb ? free package is available applications ? power supply ? output rectification ? power management ? instrumentation mechanical characteristics: ? case: epoxy, molded ? epoxy meets ul 94 v ? 0 @ 0.125 in ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? esd rating: human body model = 3b machine model = c maximum ratings please see the table on the following page to ? 220ab case 221a plastic 3 4 1 schottky barrier rectifier 30 amperes 100 volts 1 3 2, 4 2 marking diagram ayww b30h100g aka a = assembly location y = year ww = work week b30h100 = device code g = pb ? free package aka = polarity designator http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information isolated to ? 220 case 221d style 3 3 1 2 ayww b30h100g aka
mbr30h100ct, mbrf30h100ct http://onsemi.com 2 maximum ratings (per diode leg) rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v average rectified forward current (t c = 156 c) per diode per device i f(av) 15 30 a peak repetitive forward current (square wave, 20 khz, t c = 151 c) i fm 30 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 250 a operating junction temperature (note 1) t j +175 c storage temperature t stg 65 to +175 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s controlled avalanche energy (see test conditions in figures 13 and 14) w aval 200 mj esd ratings: machine model = c human body model = 3b > 400 > 8000 v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic symbol value unit maximum thermal resistance (mbr30h100ct) ? junction ? to ? case ? junction ? to ? ambient (mbrf30h100ct) ? junction ? to ? case ? junction ? to ? ambient r jc r ja r jc r ja 2.0 60 4.2 75 c/w electrical characteristics (per diode leg) characteristic symbol min typ max unit maximum instantaneous forward voltage (note 2) (i f = 15 a, t j = 25 c) (i f = 15 a, t j = 125 c) (i f = 30 a, t j = 25 c) (i f = 30 a, t j = 125 c) v f ? ? ? ? 0.76 0.64 0.88 0.76 0.80 0.67 0.93 0.80 v maximum instantaneous reverse current (note 2) (rated dc voltage, t j = 125 c) (rated dc voltage, t j = 25 c) i r ? ? 1.1 0.0008 6.0 0.0045 ma 2. pulse test: pulse width = 300 s, duty cycle 2.0%. device ordering information device order number package type shipping ? mbr30h100ct to ? 220 50 units / rail mbr30h100ctg to ? 220 (pb ? free) 50 units / rail mbrf30h100ctg to ? 220fp (pb ? free) 50 units / rail
mbr30h100ct, mbrf30h100ct http://onsemi.com 3 figure 1. typical forward voltage figure 2. maximum forward voltage i r , maximum reverse current (amps) i r , reverse current (amps) figure 3. typical reverse current figure 4. maximum reverse current 20 0 v r , reverse voltage (volts) 1e ? 01 1e ? 02 1e ? 03 1e ? 06 1e ? 08 40 t j = 125 c t j = 150 c t j = 25 c figure 5. current derating, case per leg figure 6. current derating, ambient per leg 60 80 100 1e ? 07 1e ? 05 1e ? 04 20 0 v r , reverse voltage (volts) 1e ? 01 1e ? 02 1e ? 03 1e ? 06 1e ? 08 40 t j = 125 c t j = 150 c t j = 25 c 60 80 100 1e ? 07 1e ? 05 1e ? 04 i , average forward current (amps) f (av) t a , ambient temperature ( c) 050 25 75 2.0 4.0 6.0 8.0 10 t c , case temperature (c ) 135 14 4.0 0 dc square wave 145 155 160 i , average forward current (amps) f (av) 2.0 12 16 6.0 8.0 10 12 14 16 140 150 0 100 125 150 175 square wave rated voltage applied r ja = 16 c/w dc r ja = 60 c/w (no heatsink) 170 175 165 dc v f, instantaneous forward voltage (volts) 0.2 0.4 1.0 0.6 0.8 0.1 i , instantaneous forward current (amp s f 25 c t j = 150 c 100 10 1.0 125 c 0.1 0.3 0.5 0.7 0.9 1.1 0.0 175 c v f, instantaneous forward voltage (volts) 0.2 0.4 1.0 0.6 0.8 0.1 i , instantaneous forward current (amp s f 25 c t j = 150 c 100 10 1.0 125 c 0.1 0.3 0.5 0.7 0.9 1.1 0.0 175 c 24 22 26 18 20 130 180 18 20 22 24 26
mbr30h100ct, mbrf30h100ct http://onsemi.com 4 figure 7. forward power dissipation c, capacitance (pf) 0 v r , reverse voltage (volts) 100 10 40 80 t j = 25 c 100 20 60 10000 1000 figure 8. capacitance p , average forward power dissipation (watt s f (av) i f(av) , average forward current (amps) 04 12 816 24 16 0 8 4 12 square wave 20 24 28 30 20 28 dc 26 18 2 10 6 14 22 30 210 614182226 t j = 175 c r(t), transient thermal resistance figure 9. thermal response junction ? to ? ambient for mbr30h100ct 1000 0.1 0.00001 t 1 , time (sec) 1 0.0001 0.001 0.01 1 10 100 0.000001 0.1 10 100 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t), transient thermal resistance figure 10. thermal response junction ? to ? case for mbr30h100ct 1000 0.1 0.00001 t 1 , time (sec) 10 0.01 0.0001 0.001 0.01 1 10 100 0.000001 0.1 1 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 0.01
mbr30h100ct, mbrf30h100ct http://onsemi.com 5 r(t), transient thermal resistance figure 11. thermal response junction ? to ? case for mbrf30h100ct t 1 , time (sec) figure 12. thermal response junction ? to ? ambient for mbrf30h100ct 0.1 10 0.001 1.0 10 100 1000 0.1 0.000001 z jc (t) = r(t) r jc r jc = 1.6 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.1 0.05 0.01 single pulse 0.2 0.02 1.0 0.01 0.01 0.001 0.0001 0.00001 0.1 100 0.001 1.0 10 100 1000 0.1 0.000001 z jc (t) = r(t) r jc r jc = 1.6 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.1 0.05 0.01 single pulse 0.2 0.02 1.0 0.01 0.01 0.001 0.0001 0.00001 10 r(t), transient thermal resistance t 1 , time (sec)
mbr30h100ct, mbrf30h100ct http://onsemi.com 6 mercury switch v d i d dut 10 mh coil +v dd i l s 1 bv dut i l i d v dd t 0 t 1 t 2 t figure 13. test circuit figure 14. current ? voltage waveforms the unclamped inductive switching circuit shown in figure 13 was used to demonstrate the controlled avalanche capability of this device. a mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. when s 1 is closed at t 0 the current in the inductor i l ramps up linearly; and energy is stored in the coil. at t 1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt ef fects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at bv dut and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t 2 . by solving the loop equation at the point in time when s 1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the v dd power supply while the diode is in breakdown (from t 1 to t 2 ) minus any losses due to finite component resistances. assuming the component resistive elements are small equation (1) approximates the total energy transferred to the diode. it can be seen from this equation that if the v dd voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when s 1 was closed, equation (2). w aval 1 2 li 2 lpk bv dut bv dut v dd w aval 1 2 li 2 lpk equation (1): equation (2):
mbr30h100ct, mbrf30h100ct http://onsemi.com 7 package dimensions to ? 220 case 221a ? 09 issue af notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. style 6: pin 1. anode 2. cathode 3. anode 4. cathode dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j
mbr30h100ct, mbrf30h100ct http://onsemi.com 8 package dimensions to ? 220 fullpak case 221d ? 03 issue j dim a min max min max millimeters 0.617 0.635 15.67 16.12 inches b 0.392 0.419 9.96 10.63 c 0.177 0.193 4.50 4.90 d 0.024 0.039 0.60 1.00 f 0.116 0.129 2.95 3.28 g 0.100 bsc 2.54 bsc h 0.118 0.135 3.00 3.43 j 0.018 0.025 0.45 0.63 k 0.503 0.541 12.78 13.73 l 0.048 0.058 1.23 1.47 n 0.200 bsc 5.08 bsc q 0.122 0.138 3.10 3.50 r 0.099 0.117 2.51 2.96 s 0.092 0.113 2.34 2.87 u 0.239 0.271 6.06 6.88 ? b ? ? y ? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y seating plane ? t ? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. style 3: pin 1. anode 2. cathode 3. anode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mbr30h100ct/d switchmode is a trademark of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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